In this section we describe the sample preparation procedures, the Raman measurements, and the statistical approaches developed to analyse the experimental data (see also15,23).
Experimental procedures
Ag/SiNW substrate fabrication
Au catalyzed SiNWs have been grown on Si wafers by plasma enhanced chemical vapor deposition (PECVD) using SiH\(_4\) and H\(_2\) as precursors at a total pressure of 1 Torr and flow ratio SiH\(_4\)/(H\(_2+\)SiH\(_4\)), fixed to 1:10. The substrate temperature during the growth was kept at 350 °C, and a 13.6 MHz radiofrequency was used to ignite the plasma with…
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