Purely self-rectifying memristor-based passive crossbar array for artificial neural network accelerators

Electrical characteristics of the SRM-based 1 kb passive CA

A previously developed HfSiO_x-based SRM was integrated into a 1 kb CA (32 × 32). Figure 1a shows the scanning electron microscopy images of the CA. The CA was constructed using a straightforward structure in which the patterned bottom (BE) and top (TE) electrode layers were connected perpendicularly via a crosspoint and individual SRMs were formed at each junction. The line width for each line comprising the top and bottom electrodes is set at 2 µm, resulting in an effective junction area of 4 µm². The fabrication…