Are diamonds GaN’s best friend? Revolutionizing transistor technology

The integration of a 3C-SiC layer between GaN and diamond significantly reduces thermal resistance at the interface and improves heat dissipation, allowing for better performance. Credit: Jianbo Liang, Osaka Metropolitan University

Researchers at Osaka Metropolitan University are proving that diamonds are so much more than just a girl’s best friend. Their groundbreaking research focuses on gallium nitride (GaN) transistors, which are high-power, high-frequency semiconductor devices used in…

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News Source: phys.org