High-sensitivity terahertz detection by 2D plasmons in transistors

A bird’s-eye view of the device structure and electron micrographs of the device surface. G1: gate 1 electrode, G2: gate 2 electrode, D: drain electrode, and S: source electrode. Credit: Akira Satou et al

A research group from Tohoku University and RIKEN has developed a high-speed, high-sensitivity terahertz-wave detector operating at room temperature, paving the way for advancements in the development of next generation 6G/7G technology.

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News Source: phys.org