Manufacturing of quantum-tunneling MIM nanodiodes via rapid atmospheric CVD in terahertz band

Figure 1a shows a diagram of cross-sectional view Pt–Al₂O₃–Al MIM diodes that we fabricated. The wafers used were p-doped silicon wafers with a thermally grown 285 nm oxide layer. Next, we patterned the first metal electrodes using e-beam lithography. Pt was deposited using an e-beam evaporation process. Following this step, we deposited an Al₂O₃ layer on top of the Pt. In our experiments, this layer had different thicknesses ranging from 3 to 9 nm. The Al₂O₃ layer was deposited at 150 °C using AP-CVD and PEALD systems. The details of these deposition conditions are elaborated in…