How Topological Materials Are Paving the Way

A schematic image of conversion phenomenon from charge current to spin current based on spin Hall effect in Co3Sn2S2 layer. Credit: Takeshi Seki et al.

Researchers highlight the potential of cobalt-tin-sulfur in spintronic devices, revealing its capability to reduce energy consumption and heralding a new era in electronics.

A team of researchers has made a significant breakthrough that could revolutionize next-generation electronics by enabling non-volatility, large-scale integration, low power consumption, high speed, and high reliability in spintronic devices.

Details of their findings were…

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News Source: scitechdaily.com


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