Wide-range and area-selective threshold voltage tunability in ultrathin indium oxide transistors

Indium has been utilized across a variety of applications (element scarcity is shown in Supplementary Table 1), including displays (e.g., IGZO), transparent electrodes (e.g., ITO), and solar cells (e.g., CIGS). In this study, ultrathin In₂O₃ is employed as the channel material of a transistor, as shown schematically in Fig. 1a. The transistor is fabricated using atomic layer deposition (ALD) to form a 2–4 nm In₂O₃ layer on p⁺⁺Si substrates with a 30 nm-thick SiO₂. Nickel is used as the source and drain contacts. It is important to note that the entire fabrication process is…