Visualizing single-molecule conformational transition and binding dynamics of intrinsically disordered proteins

Device fabrication and real-time electrical monitoring

The SiNW-FET-based single-molecule device was fabricated through point modification and a confinement reaction on the side wall of a SiNW^48,53,54. Briefly, after the fabrication of the SiNW-FET array, a gap-opening process was performed using electron beam lithography to create a nanogap on the side wall of the SiNW and expose the Si-H surface after wet-etching by HF-NH₄F buffer. Then, through alkyne hydrosilylation of Si-H bonds with undecynoic acid and N-hydroxysuccinimide esterification, active ester terminals were formed for…